Parameters | |
---|---|
Current - Continuous Drain (Id) @ 25°C | 7.3A Tc |
Gate Charge (Qg) (Max) @ Vgs | 13.2nC @ 10V |
Rise Time | 11.8ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 4.5 ns |
Turn-Off Delay Time | 19.8 ns |
Continuous Drain Current (ID) | 7.3A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 220V |
Drain-source On Resistance-Max | 0.927Ohm |
Drain to Source Breakdown Voltage | 220V |
Avalanche Energy Rating (Eas) | 22 mJ |
Radiation Hardening | No |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
RoHS Status | RoHS Compliant |
Package / Case | 8-VDFN Exposed Pad |
Surface Mount | YES |
Lead Free | Lead Free |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
Series | TrenchMOS™ |
JESD-609 Code | e4 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 8 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 50W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 50W |
Turn On Delay Time | 9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 386m Ω @ 2.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 656pF @ 30V |