Parameters | |
---|---|
Drain-source On Resistance-Max | 0.055Ohm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Surface Mount | YES |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 6 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 530mW Ta 6.25W Tc |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 15 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 55m Ω @ 2.4A, 4.5V |
Vgs(th) (Max) @ Id | 1.25V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 4.1A Ta |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
Rise Time | 22ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 22 ns |
Turn-Off Delay Time | 51 ns |
Continuous Drain Current (ID) | 4.1A |
Gate to Source Voltage (Vgs) | 12V |
Max Dual Supply Voltage | -20V |