banner_page

PMPB10XNEZ

MOSFET N-CH 20V SOT1220


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PMPB10XNEZ
  • Package: 6-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 646
  • Description: MOSFET N-CH 20V SOT1220 (Kg)

Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 9A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2175pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Gate Charge (Qg) (Max) @ Vgs 34nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) 9A
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.014Ohm
Pulsed Drain Current-Max (IDM) 36A
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Reference Standard IEC-60134
JESD-30 Code S-PDSO-N6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.7W Ta 12.5W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good