PMPB11EN,115
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 20.6nC @ 10V |
| Rise Time | 10ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 9A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 30V |
| Drain Current-Max (Abs) (ID) | 9A |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 34A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Pin Count | 6 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.7W Ta 12.5W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 14.5m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
See Relate Datesheet
