Parameters | |
---|---|
Vgs (Max) | ±12V |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Continuous Drain Current (ID) | 8.2A |
Packaging | Tape & Reel (TR) |
Max Dual Supply Voltage | -12V |
Published | 2012 |
Drain-source On Resistance-Max | 0.019Ohm |
Part Status | Active |
Pulsed Drain Current-Max (IDM) | 33A |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
RoHS Status | ROHS3 Compliant |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | NO LEAD |
Pin Count | 6 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1.7W Ta 12.5W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 19m Ω @ 8.2A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2875pF @ 6V |
Factory Lead Time | 1 Week |
Current - Continuous Drain (Id) @ 25°C | 8.2A Ta |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 4.5V |
Surface Mount | YES |
Drain to Source Voltage (Vdss) | 12V |
Number of Pins | 6 |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |