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PMPB19XP,115

MOSFET P-CH 20V 7.2A 6DFN


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PMPB19XP,115
  • Package: 6-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 348
  • Description: MOSFET P-CH 20V 7.2A 6DFN (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.7W Ta 12.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22.5m Ω @ 7.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2890pF @ 10V
Current - Continuous Drain (Id) @ 25°C 7.2A Ta
Gate Charge (Qg) (Max) @ Vgs 43.2nC @ 4.5V
Rise Time 54ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 7.2A
Gate to Source Voltage (Vgs) -680mV
Max Dual Supply Voltage -20V
Drain-source On Resistance-Max 0.0225Ohm
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 30A
RoHS Status ROHS3 Compliant
See Relate Datesheet

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