PMPB33XN,115
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Pin Count | 6 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.5W Ta 8.3W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 47m Ω @ 4.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 505pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 7.6nC @ 4.5V |
| Rise Time | 17ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | 4.3A |
| Gate to Source Voltage (Vgs) | 12V |
| Max Dual Supply Voltage | 30V |
| Drain-source On Resistance-Max | 0.047Ohm |
| Pulsed Drain Current-Max (IDM) | 17A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
