banner_page

PMPB43XPE,115

PMPB43XPE - 20 V, single P-channel Trench MOSFET


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PMPB43XPE,115
  • Package: 6-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 643
  • Description: PMPB43XPE - 20 V, single P-channel Trench MOSFET (Kg)

Details

Tags

Parameters
Pulsed Drain Current-Max (IDM) 12A
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.7W Ta 12.5W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 48m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 23.4nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) 5A
Max Dual Supply Voltage -20V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.048Ohm
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good