PMPB55ENEAX
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Pin Count | 6 |
| Reference Standard | AEC-Q101; IEC-60134 |
| JESD-30 Code | S-PDSO-N6 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.65W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 56m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain-source On Resistance-Max | 0.056Ohm |
| Pulsed Drain Current-Max (IDM) | 16A |
| DS Breakdown Voltage-Min | 60V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
