Parameters | |
---|---|
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Factory Lead Time | 1 Week |
JEDEC-95 Code | TO-236AB |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Drain Current-Max (Abs) (ID) | 5.5A |
Surface Mount | YES |
Transistor Element Material | SILICON |
Drain-source On Resistance-Max | 0.024Ohm |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
DS Breakdown Voltage-Min | 30V |
Published | 2016 |
Series | Automotive, AEC-Q101 |
RoHS Status | ROHS3 Compliant |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Reference Standard | AEC-Q101; IEC-60134 |
JESD-30 Code | R-PDSO-G3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 460mW Ta 6.94W Tc |
Operating Mode | ENHANCEMENT MODE |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 24m Ω @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 597pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 5.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |