PMV45EN2R
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 1997 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Resistance | 35mOhm |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Reference Standard | IEC-60134 |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 510mW Ta 5W Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 42m Ω @ 4.1A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 209pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 4.1A |
| JEDEC-95 Code | TO-236AB |
| DS Breakdown Voltage-Min | 30V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
