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PMXB120EPEZ

NEXPERIA - PMXB120EPEZ - MOSFET Transistor, P Channel, -2.4 A, -30 V, 0.1 ohm, -10 V, -1.5 V


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PMXB120EPEZ
  • Package: 3-XDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 110
  • Description: NEXPERIA - PMXB120EPEZ - MOSFET Transistor, P Channel, -2.4 A, -30 V, 0.1 ohm, -10 V, -1.5 V (Kg)

Details

Tags

Parameters
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 309pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.4A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 2.4A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Pin Count 3
Power Dissipation-Max 400mW Ta 8.3W Tc
Turn On Delay Time 4 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 120m Ω @ 2.4A, 10V
See Relate Datesheet

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