PMXB360ENEAZ
| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 10V |
| Rise Time | 3.5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 9 ns |
| Continuous Drain Current (ID) | 1.1A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 80V |
| Drain-source On Resistance-Max | 0.45Ohm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 3-XDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 400mW Ta 6.25W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 2 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 450m Ω @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 2.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 130pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A Ta |
See Relate Datesheet
