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PMXB360ENEAZ

NEXPERIA - PMXB360ENEAZ - MOSFET Transistor, N Channel, 1.1 A, 80 V, 0.345 ohm, 10 V, 1.7 V RoHS Compliant: Yes


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PMXB360ENEAZ
  • Package: 3-XDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 888
  • Description: NEXPERIA - PMXB360ENEAZ - MOSFET Transistor, N Channel, 1.1 A, 80 V, 0.345 ohm, 10 V, 1.7 V RoHS Compliant: Yes (Kg)

Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V
Rise Time 3.5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 1.1A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.45Ohm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 400mW Ta 6.25W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 130pF @ 40V
Current - Continuous Drain (Id) @ 25°C 1.1A Ta
See Relate Datesheet

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