banner_page

PMXB65UPEZ

NEXPERIA - PMXB65UPEZ - Transistor MOSFET, Canal P, -3.2 A, -12 V, 0.059 ohm, -4.5 V, -680 mV


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PMXB65UPEZ
  • Package: 3-XDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 328
  • Description: NEXPERIA - PMXB65UPEZ - Transistor MOSFET, Canal P, -3.2 A, -12 V, 0.059 ohm, -4.5 V, -680 mV (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 317mW Ta 8.33W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 72mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 634pF @ 6V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 3.2A
Input Capacitance 634pF
Drain to Source Resistance 59mOhm
Rds On Max 72 mΩ
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good