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PMZ130UNEYL

MOSFET N-CH 20V SOT883


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PMZ130UNEYL
  • Package: SC-101, SOT-883
  • Datasheet: PDF
  • Stock: 311
  • Description: MOSFET N-CH 20V SOT883 (Kg)

Details

Tags

Parameters
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 1.8A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 93pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
Gate Charge (Qg) (Max) @ Vgs 1.6nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 1.8A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.15Ohm
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 350mW Ta 6.25W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5.3 ns
See Relate Datesheet

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