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PMZ250UN,315

NEXPERIA - PMZ250UN,315 - MOSFET Transistor, N Channel, 200 mA, 20 V, 0.25 ohm, 4.5 V, 700 mV


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PMZ250UN,315
  • Package: SC-101, SOT-883
  • Datasheet: PDF
  • Stock: 604
  • Description: NEXPERIA - PMZ250UN,315 - MOSFET Transistor, N Channel, 200 mA, 20 V, 0.25 ohm, 4.5 V, 700 mV (Kg)

Details

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Parameters
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 4.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 20V
Current - Continuous Drain (Id) @ 25°C 2.28A Tc
Gate Charge (Qg) (Max) @ Vgs 0.89nC @ 4.5V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 18.5 ns
Continuous Drain Current (ID) 2.28A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage 20V
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 4.56A
Height 470μm
Length 1.02mm
Width 620μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 300MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Power Dissipation-Max 2.5W Tc
See Relate Datesheet

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