Parameters | |
---|---|
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2017 |
Series | TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 420MOhm |
HTS Code | 8541.29.00.75 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 6.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 420m Ω @ 200mA, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 37pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 1.87A Tc |
Gate Charge (Qg) (Max) @ Vgs | 0.65nC @ 4.5V |
Rise Time | 9.5ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 5.5 ns |
Turn-Off Delay Time | 14 ns |
Continuous Drain Current (ID) | 1.87A |
Gate to Source Voltage (Vgs) | 12V |
Max Dual Supply Voltage | 30V |
Drain to Source Breakdown Voltage | 30V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |