Parameters | |
---|---|
Height | 470μm |
ECCN Code | EAR99 |
Length | 1.02mm |
Resistance | 460MOhm |
Width | 620μm |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Radiation Hardening | No |
REACH SVHC | No SVHC |
Peak Reflow Temperature (Cel) | 260 |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 4 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Factory Lead Time | 1 Week |
Rds On (Max) @ Id, Vgs | 460m Ω @ 200mA, 4.5V |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Vgs(th) (Max) @ Id | 950mV @ 250μA |
Package / Case | SC-101, SOT-883 |
Input Capacitance (Ciss) (Max) @ Vds | 43pF @ 25V |
Surface Mount | YES |
Current - Continuous Drain (Id) @ 25°C | 1.78A Tc |
Number of Pins | 3 |
Gate Charge (Qg) (Max) @ Vgs | 0.89nC @ 4.5V |
Rise Time | 7.5ns |
Weight | 453.59237mg |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Transistor Element Material | SILICON |
Vgs (Max) | ±8V |
Operating Temperature | -55°C~150°C TJ |
Fall Time (Typ) | 4.5 ns |
Packaging | Tape & Reel (TR) |
Turn-Off Delay Time | 18 ns |
Published | 2007 |
Series | TrenchMOS™ |
Continuous Drain Current (ID) | 1.78A |
Threshold Voltage | 700mV |
JESD-609 Code | e3 |
Part Status | Active |
Gate to Source Voltage (Vgs) | 8V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Dual Supply Voltage | 30V |
Number of Terminations | 3 |
Drain to Source Breakdown Voltage | 30V |