Parameters | |
---|---|
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Surface Mount | YES |
Number of Pins | 3 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2007 |
Series | TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 900MOhm |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 2 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 900m Ω @ 300mA, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 23pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 1.22A Tc |
Gate Charge (Qg) (Max) @ Vgs | 1.05nC @ 10V |
Rise Time | 4ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 2.2 ns |
Turn-Off Delay Time | 5 ns |
Continuous Drain Current (ID) | 1.22A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 60V |
Drain to Source Breakdown Voltage | 60V |
Dual Supply Voltage | 60V |
Nominal Vgs | 2 V |
Height | 470μm |
Length | 1.02mm |
Width | 620μm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |