Parameters | |
---|---|
Turn-Off Delay Time | 18.5 ns |
Continuous Drain Current (ID) | 1A |
Gate to Source Voltage (Vgs) | 8V |
Max Dual Supply Voltage | 20V |
Drain Current-Max (Abs) (ID) | 1A |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 360mW Ta 2.7W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 4.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 380m Ω @ 500mA, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 83pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 1A Ta |
Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V |
Rise Time | 10ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 5 ns |