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PMZB290UN,315

MOSFET N-CH 20V 1A 3DFN


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PMZB290UN,315
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 150
  • Description: MOSFET N-CH 20V 1A 3DFN (Kg)

Details

Tags

Parameters
Turn-Off Delay Time 18.5 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage 20V
Drain Current-Max (Abs) (ID) 1A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 3-XFDFN
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 360mW Ta 2.7W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 4.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 83pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Gate Charge (Qg) (Max) @ Vgs 0.68nC @ 4.5V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 5 ns
See Relate Datesheet

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