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PMZB290UNE2YL

Mosfet Transistor, N Channel, 1.2 A, 20 V, 0.27 Ohm, 4.5 V, 700 Mv Rohs Compliant: Yes


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PMZB290UNE2YL
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 624
  • Description: Mosfet Transistor, N Channel, 1.2 A, 20 V, 0.27 Ohm, 4.5 V, 700 Mv Rohs Compliant: Yes (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 350mW Ta 5.43W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 320m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.2A Ta
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V
Rise Time 10ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 1.2A
Gate to Source Voltage (Vgs) 8V
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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