Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2015 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | NO LEAD |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 350mW Ta 6.25W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 3 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 510m Ω @ 1A, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 122pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 1A Ta |
Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4.5V |
Rise Time | 6ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 5 ns |
Turn-Off Delay Time | 22 ns |
Continuous Drain Current (ID) | 1A |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 1A |
Drain-source On Resistance-Max | 0.51Ohm |
RoHS Status | ROHS3 Compliant |