PMZB670UPE,315
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 360mW Ta 2.7W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 715mW |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 850m Ω @ 400mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 87pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 680mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1.14nC @ 4.5V |
| Rise Time | 30ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 72 ns |
| Turn-Off Delay Time | 80 ns |
| Continuous Drain Current (ID) | 680mA |
| Gate to Source Voltage (Vgs) | 8V |
| Max Dual Supply Voltage | -20V |
| Drain Current-Max (Abs) (ID) | 0.68A |
| Drain-source On Resistance-Max | 0.85Ohm |
| Drain to Source Breakdown Voltage | -20V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
