Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Bulk |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | Other Transistors |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | O-PBCY-T3 |
Number of Elements | 1 |
Configuration | SINGLE |
Power - Max | 625mW |
Transistor Application | SWITCHING |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V |
Current - Collector Cutoff (Max) | 10nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Current - Collector (Ic) (Max) | 800mA |
Transition Frequency | 300MHz |
Frequency - Transition | 300MHz |
Power Dissipation-Max (Abs) | 0.625W |
Turn Off Time-Max (toff) | 285ns |
Turn On Time-Max (ton) | 35ns |
RoHS Status | ROHS3 Compliant |