PN5135
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2008 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Reach Compliance Code | unknown |
| JESD-30 Code | O-PBCY-W3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 625mW |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA 10V |
| Current - Collector Cutoff (Max) | 300nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 10mA, 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Current - Collector (Ic) (Max) | 200mA |
| Transition Frequency | 40MHz |
| Power Dissipation-Max (Abs) | 0.625W |
| Collector-Base Capacitance-Max | 25pF |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
