Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-XFDFN Exposed Pad |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Series | Automotive, AEC-Q101 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 |
Max Power Dissipation | 230mW |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 6 |
Reference Standard | AEC-Q101; IEC-60134 |
JESD-30 Code | R-PDSO-N6 |
Number of Elements | 2 |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
Case Connection | COLLECTOR |
Power - Max | 230mW |
Transistor Application | SWITCHING |
Polarity/Channel Type | NPN AND PNP |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Collector Emitter Voltage (VCEO) | 150mV |
Max Collector Current | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA 5V |
Current - Collector Cutoff (Max) | 1μA |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500μA, 10mA |
Collector Emitter Breakdown Voltage | 50V |
Transition Frequency | 230MHz |
Frequency - Transition | 230MHz 180MHz |
Resistor - Base (R1) | 22k Ω |
Resistor - Emitter Base (R2) | 22k Ω |
RoHS Status | ROHS3 Compliant |