PQMD3Z
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 6-XFDFN Exposed Pad |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 |
| Max Power Dissipation | 230mW |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 6 |
| Reference Standard | AEC-Q101; IEC-60134 |
| JESD-30 Code | R-PDSO-N6 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Case Connection | COLLECTOR |
| Power - Max | 230mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN AND PNP |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Collector Emitter Voltage (VCEO) | 150mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA 5V |
| Current - Collector Cutoff (Max) | 1μA |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500μA, 10mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 230MHz |
| Frequency - Transition | 230MHz 180MHz |
| Resistor - Base (R1) | 10k Ω |
| Resistor - Emitter Base (R2) | 10k Ω |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
See Relate Datesheet
