Parameters | |
---|---|
Rds On (Max) @ Id, Vgs | 5m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 8250pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 75A Tc |
Gate Charge (Qg) (Max) @ Vgs | 165nC @ 10V |
Rise Time | 73ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 74 ns |
Factory Lead Time | 1 Week |
Turn-Off Delay Time | 144 ns |
Continuous Drain Current (ID) | 75A |
Contact Plating | Tin |
Gate to Source Voltage (Vgs) | 20V |
Mounting Type | Through Hole |
Max Dual Supply Voltage | 75V |
Package / Case | TO-220-3 |
Drain-source On Resistance-Max | 0.005Ohm |
Drain to Source Breakdown Voltage | 75V |
Surface Mount | NO |
Pulsed Drain Current-Max (IDM) | 400A |
Number of Pins | 3 |
Avalanche Energy Rating (Eas) | 500 mJ |
Transistor Element Material | SILICON |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Operating Temperature | -55°C~175°C TJ |
Lead Free | Lead Free |
Packaging | Tube |
Published | 1997 |
Series | TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
HTS Code | 8541.29.00.75 |
Technology | MOSFET (Metal Oxide) |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 230W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 230W |
Case Connection | DRAIN |
Turn On Delay Time | 37 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |