Parameters | |
---|---|
RoHS Status | ROHS3 Compliant |
Number of Terminations | 4 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Pin Count | 8 |
JESD-30 Code | R-PSSO-G4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 91W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 6.7 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Factory Lead Time | 1 Week |
Rds On (Max) @ Id, Vgs | 11.3m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Contact Plating | Tin |
Input Capacitance (Ciss) (Max) @ Vds | 1368pF @ 30V |
Mounting Type | Surface Mount |
Current - Continuous Drain (Id) @ 25°C | 61A Tc |
Package / Case | SOT-1210, 8-LFPAK33 |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Surface Mount | YES |
Rise Time | 8.46ns |
Number of Pins | 8 |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Transistor Element Material | SILICON |
Vgs (Max) | ±20V |
Operating Temperature | -55°C~175°C TJ |
Fall Time (Typ) | 9.18 ns |
Turn-Off Delay Time | 16.9 ns |
Packaging | Tape & Reel (TR) |
Continuous Drain Current (ID) | 61A |
Published | 2013 |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 60V |
Drain to Source Breakdown Voltage | 60V |
Part Status | Active |
Pulsed Drain Current-Max (IDM) | 232A |
Avalanche Energy Rating (Eas) | 50.6 mJ |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Radiation Hardening | No |