PSMN013-100ES,127
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| Power Dissipation-Max | 170W Tc |
| Element Configuration | Single |
| Power Dissipation | 170W |
| Turn On Delay Time | 20.7 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 13.9m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 3195pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 68A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 59nC @ 10V |
| Rise Time | 25ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 24 ns |
| Turn-Off Delay Time | 52.5 ns |
| Continuous Drain Current (ID) | 68A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
| Drain to Source Breakdown Voltage | 90V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
