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PSMN013-60YLX

PSMN013-60YL - N-channel 60 V, 13 mO logic level MOSFET in LFPAK56


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN013-60YLX
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 864
  • Description: PSMN013-60YL - N-channel 60 V, 13 mO logic level MOSFET in LFPAK56 (Kg)

Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Reference Standard IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 95W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2603pF @ 25V
Current - Continuous Drain (Id) @ 25°C 53A Tc
Gate Charge (Qg) (Max) @ Vgs 33.2nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 53A
JEDEC-95 Code MO-235
Drain-source On Resistance-Max 0.015Ohm
Pulsed Drain Current-Max (IDM) 212A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 42.7 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
See Relate Datesheet

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