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PSMN016-100PS,127

MOSFET N-CH 100V TO220AB


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN016-100PS,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 597
  • Description: MOSFET N-CH 100V TO220AB (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 148W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 148W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2404pF @ 50V
Current - Continuous Drain (Id) @ 25°C 57A Tj
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Rise Time 23ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 57A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain Current-Max (Abs) (ID) 96A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 288A
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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