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PSMN017-30EL,127

MOSFET N-CH 30V 32A I2PAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN017-30EL,127
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 106
  • Description: MOSFET N-CH 30V 32A I2PAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 47W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 47W
Case Connection DRAIN
Turn On Delay Time 10.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 552pF @ 15V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 10.7nC @ 10V
Rise Time 9.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.1 ns
Turn-Off Delay Time 11.4 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 154A
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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