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PSMN020-30MLCX

PSMN020-30MLC - N-channel 30 V 18.1 m? logic level MOSFET in LFPAK33 using TrenchMOS Technology


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN020-30MLCX
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 737
  • Description: PSMN020-30MLC - N-channel 30 V 18.1 m? logic level MOSFET in LFPAK33 using TrenchMOS Technology (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 8
JESD-30 Code R-PSSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 33W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 6.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18.1m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 15V
Current - Continuous Drain (Id) @ 25°C 31.8A Tc
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V
Rise Time 7.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.1 ns
Turn-Off Delay Time 10.1 ns
Continuous Drain Current (ID) 31.8A
Threshold Voltage 1.62V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.027Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 7.7 mJ
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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