Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 41W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 41W |
Case Connection | DRAIN |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 22.6m Ω @ 5A, 10V |
Vgs(th) (Max) @ Id | 2.15V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 447pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 30A Tc |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
Rise Time | 29ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 7 ns |
Turn-Off Delay Time | 17 ns |
Continuous Drain Current (ID) | 30A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 30V |
Drain-source On Resistance-Max | 0.0296Ohm |
Drain to Source Breakdown Voltage | 30V |
Avalanche Energy Rating (Eas) | 7 mJ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |