Parameters | |
---|---|
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 22mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 2.15V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 447pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 30A Tc |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
Rise Time | 29ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 7 ns |
Turn-Off Delay Time | 17 ns |
Continuous Drain Current (ID) | 30A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 30V |
Drain to Source Breakdown Voltage | 30V |
Input Capacitance | 447pF |
Drain to Source Resistance | 22mOhm |
Rds On Max | 22 mΩ |
Height | 6.35mm |
Length | 6.35mm |
Width | 6.35mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Supplier Device Package | TO-220AB |
Weight | 453.59237mg |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2010 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 22MOhm |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 41W Tc |
Element Configuration | Single |
Power Dissipation | 41W |
Turn On Delay Time | 12 ns |