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PSMN027-100PS,127

PSMN027-100PS - N-channel 100V 26.8 m? standard level MOSFET in TO220.


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN027-100PS,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 402
  • Description: PSMN027-100PS - N-channel 100V 26.8 m? standard level MOSFET in TO220. (Kg)

Details

Tags

Parameters
Rise Time 11.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.9 ns
Turn-Off Delay Time 29.6 ns
Continuous Drain Current (ID) 37A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.0268Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 59 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 103W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 103W
Case Connection DRAIN
Turn On Delay Time 14.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1624pF @ 50V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
See Relate Datesheet

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