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PSMN028-100YS,115

PSMN028-100YS/LFPAK/REEL7//


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN028-100YS,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 915
  • Description: PSMN028-100YS/LFPAK/REEL7// (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 89W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1634pF @ 50V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 42A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain Current-Max (Abs) (ID) 30A
Drain-source On Resistance-Max 0.0275Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 68 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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