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PSMN059-150Y,115

NEXPERIA - PSMN059-150Y,115 - Trans MOSFET N-CH 150V 43A 5-Pin(4+Tab) LFPAK T/R


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN059-150Y,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 610
  • Description: NEXPERIA - PSMN059-150Y,115 - Trans MOSFET N-CH 150V 43A 5-Pin(4+Tab) LFPAK T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 59MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 113W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 113W
Case Connection DRAIN
Turn On Delay Time 14.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 59m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1529pF @ 30V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Gate Charge (Qg) (Max) @ Vgs 27.9nC @ 10V
Rise Time 42ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11.1 ns
Turn-Off Delay Time 54.2 ns
Continuous Drain Current (ID) 43A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 150V
Drain to Source Breakdown Voltage 150V
Avalanche Energy Rating (Eas) 255 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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