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PSMN0R9-30YLDX

PSMN0R9-30YLD - N-channel 30 V, 0.87 mO, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN0R9-30YLDX
  • Package: SOT-1023, 4-LFPAK
  • Datasheet: PDF
  • Stock: 794
  • Description: PSMN0R9-30YLD - N-channel 30 V, 0.87 mO, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SOT-1023, 4-LFPAK
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 291W
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 38.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 0.87m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 7668pF @ 15V
Current - Continuous Drain (Id) @ 25°C 300A
Gate Charge (Qg) (Max) @ Vgs 109nC @ 10V
Rise Time 49.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 42.6 ns
Turn-Off Delay Time 63 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain Current-Max (Abs) (ID) 300A
Avalanche Energy Rating (Eas) 2987 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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