banner_page

PSMN1R2-25YL,115

NEXPERIA - PSMN1R2-25YL,115 - MOSFET, N CHANNEL, 25V, 100A, 4-SOT-669


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN1R2-25YL,115
  • Package: SOT-1023, 4-LFPAK
  • Datasheet: PDF
  • Stock: 509
  • Description: NEXPERIA - PSMN1R2-25YL,115 - MOSFET, N CHANNEL, 25V, 100A, 4-SOT-669 (Kg)

Details

Tags

Parameters
Avalanche Energy Rating (Eas) 677 mJ
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SOT-1023, 4-LFPAK
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 1.2MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 121W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 121W
Case Connection DRAIN
Turn On Delay Time 69 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6380pF @ 12V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Rise Time 125ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 25V
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 815A
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good