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PSMN1R2-25YLC,115

MOSFET N-CH 25V 100A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN1R2-25YLC,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 385
  • Description: MOSFET N-CH 25V 100A LFPAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY, ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Output Voltage 2.5V
Output Type Fixed
Max Output Current 1A
Number of Elements 1
Polarity Positive
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 179W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 179W
Case Connection DRAIN
Quiescent Current 6mA
Turn On Delay Time 32 ns
Accuracy 1 %
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 25A, 10V
Max Input Voltage 20V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4173pF @ 12V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Rise Time 42ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 25V
Drain to Source Breakdown Voltage 25V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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