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PSMN1R3-30YL,115

MOSFET N-CH 30V 100A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN1R3-30YL,115
  • Package: SOT-1023, 4-LFPAK
  • Datasheet: PDF
  • Stock: 918
  • Description: MOSFET N-CH 30V 100A LFPAK (Kg)

Details

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Parameters
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 383 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SOT-1023, 4-LFPAK
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 121W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6227pF @ 12V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.00195Ohm
Pulsed Drain Current-Max (IDM) 923A
See Relate Datesheet

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