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PSMN1R5-30YLC,115

PSMN1R5-30YLC - N-channel 30 V 1.55m? logic level MOSFET in LFPAK using NextPower technology


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN1R5-30YLC,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 828
  • Description: PSMN1R5-30YLC - N-channel 30 V 1.55m? logic level MOSFET in LFPAK using NextPower technology (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Resistance 2.05MOhm
Additional Feature HIGH RELIABILITY, ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 179W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 179W
Case Connection DRAIN
Turn On Delay Time 33 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.55m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4044pF @ 15V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 62ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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