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PSMN1R6-30BL,118

MOSFET N-CH 30V 100A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN1R6-30BL,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 882
  • Description: MOSFET N-CH 30V 100A D2PAK (Kg)

Details

Tags

Parameters
Input Capacitance 12.493nF
Drain to Source Resistance 1.58mOhm
Rds On Max 1.9 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 306W Tc
Element Configuration Single
Power Dissipation 306W
Turn On Delay Time 104 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 12493pF @ 15V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 212nC @ 10V
Rise Time 163ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 87 ns
Turn-Off Delay Time 174 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
See Relate Datesheet

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