Parameters | |
---|---|
Input Capacitance | 12.493nF |
Drain to Source Resistance | 1.58mOhm |
Rds On Max | 1.9 mΩ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Supplier Device Package | D2PAK |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |
Power Dissipation-Max | 306W Tc |
Element Configuration | Single |
Power Dissipation | 306W |
Turn On Delay Time | 104 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 1.9mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 2.15V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 12493pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 212nC @ 10V |
Rise Time | 163ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 87 ns |
Turn-Off Delay Time | 174 ns |
Continuous Drain Current (ID) | 100A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 30V |
Drain to Source Breakdown Voltage | 30V |