Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | SC-100, SOT-669 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Series | TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.75 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G4 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 97W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.15V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 3980pF @ 12V |
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 100A |
JEDEC-95 Code | MO-235 |
Drain-source On Resistance-Max | 0.0032Ohm |
Pulsed Drain Current-Max (IDM) | 667A |
DS Breakdown Voltage-Min | 30V |
Avalanche Energy Rating (Eas) | 151 mJ |
RoHS Status | ROHS3 Compliant |