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PSMN2R2-40PS,127

PSMN2R2-40PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN2R2-40PS,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 290
  • Description: PSMN2R2-40PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 306W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 8423pF @ 20V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.0021Ohm
Pulsed Drain Current-Max (IDM) 962A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 1240 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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