PSMN2R5-60PLQ
| Parameters | |
|---|---|
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 349W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 349W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.6m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Current - Continuous Drain (Id) @ 25°C | 150A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 223nC @ 10V |
| Rise Time | 119ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 128 ns |
| Turn-Off Delay Time | 224 ns |
| Continuous Drain Current (ID) | 150A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain to Source Breakdown Voltage | 60V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
See Relate Datesheet
