Parameters | |
---|---|
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.72m Ω @ 25A, 10V |
Factory Lead Time | 1 Week |
Vgs(th) (Max) @ Id | 2.2V @ 1mA |
Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 1334pF @ 12V |
Current - Continuous Drain (Id) @ 25°C | 70A Tc |
Gate Charge (Qg) (Max) @ Vgs | 18.9nC @ 10V |
Drain to Source Voltage (Vdss) | 25V |
Mounting Type | Surface Mount |
Package / Case | SC-100, SOT-669 |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Transistor Element Material | SILICON |
Continuous Drain Current (ID) | 70A |
Operating Temperature | -55°C~175°C TJ |
Drain-source On Resistance-Max | 0.00372Ohm |
Pulsed Drain Current-Max (IDM) | 405A |
DS Breakdown Voltage-Min | 25V |
Packaging | Tape & Reel (TR) |
Avalanche Energy Rating (Eas) | 106.6 mJ |
FET Feature | Schottky Diode (Body) |
RoHS Status | ROHS3 Compliant |
Published | 2016 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Additional Feature | HIGH RELIABILITY |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Pin Count | 8 |
Reference Standard | IEC-60134 |
JESD-30 Code | R-PSSO-G4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 65W Tc |
Operating Mode | ENHANCEMENT MODE |