Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SC-100, SOT-669 |
Number of Pins | 5 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 69W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 69W |
Case Connection | DRAIN |
Turn On Delay Time | 28 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.15V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 2090pF @ 12V |
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 36.6nC @ 10V |
Rise Time | 51ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 18 ns |
Turn-Off Delay Time | 44 ns |
Continuous Drain Current (ID) | 100A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 99A |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 396A |
Avalanche Energy Rating (Eas) | 41 mJ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |